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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?e6 650vcoolmos?e6powertransistor lps65r600e6 datasheet rev.2.0 final powermanagement&multimarket
2 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet ipaksl 1description coolmos?isarevolutionarytechnologyforhighvoltagepower mosfets,designedaccordingtothesuperjunction(sj)principleand pioneeredbyinfineontechnologies.coolmos?e6seriescombinesthe experienceoftheleadingsjmosfetsupplierwithhighclassinnovation. theresultingdevicesprovideallbenefitsofafastswitchingsuperjunction mosfetwhilenotsacrificingeaseofuse.extremelylowswitchingand conductionlossesmakeswitchingapplicationsevenmoreefficient,more compact,lighterandcooler. features ?extremelylowlossesduetoverylowfomrdson*qgandeoss ?veryhighcommutationruggedness ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifiedforindustrialgradeapplicationsaccordingtojedec(j-std20 andjesd22) applications pfcstages,hardswitchingpwmstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandlighting,server, telecomandups pleasenote:formosfetparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. table1keyperformanceparameters parameter value unit v ds @ t j,max 700 v r ds(on),max 600 m w q g.typ 23 nc i d,pulse 18 a e oss @400v 2 j body diode di/dt 500 a/s type/orderingcode package marking relatedlinks IPS65R600E6 pg-to 251 65e6600 see appendix a tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
3 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 appendix a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
4 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet 2maximumratings at t j =25c,unlessotherwisespecified table2maximumratings values min. typ. max. parameter symbol unit note/testcondition continuous drain current 1) i d - - - - 7.3 4.6 a t c =25c t c =100c pulsed drain current 2) i d,pulse - - 18 a t c =25c avalanche energy, single pulse e as - - 142 mj i d =1.3a; v dd =50v; see table 10 avalanche energy, repetitive e ar - - 0.21 mj i d =1.3a; v dd =50v; see table 10 avalanche current, repetitive i ar - - 1.3 a - mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480v gate source voltage (static) v gs -20 - 20 v static; gate source voltage (dynamic) v gs -30 - 30 v ac (f>1 hz) power dissipation p tot - - 63 w t c =25c storage temperature t stg -55 - 150 c - operating junction temperature t j -55 - 150 c - continuous diode forward current i s - - 6.3 a t c =25c diode pulse current 2) i s,pulse - - 18 a t c =25c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400v, i sd <= i s , t j =25c see table 8 maximum diode commutation speed di f /dt - - 500 a/ m s v ds =0...400v, i sd <= i s , t j =25c see table 8 1) limited by t j max . maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) identicallowsideandhighsideswitchwithidentical r g tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
5 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet 3thermalcharacteristics table3thermalcharacteristics values min. typ. max. parameter symbol unit note/testcondition thermal resistance, junction - case r thjc - - 2 c/w - thermal resistance, junction - ambient r thja - - 62 c/w leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6mm (0.063 in.) from case for 10s tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
6 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet 4electricalcharacteristics at t j =25c,unlessotherwisespecified table4staticcharacteristics values min. typ. max. parameter symbol unit note/testcondition drain-source breakdown voltage v (br)dss 650 - - v v gs =0v, i d =1ma gate threshold voltage v (gs)th 2.5 3.0 3.5 v v ds = v gs , i d =0.21ma zero gate voltage drain current i dss - - - 10 1 - m a v ds =650, v gs =0v, t j =25c v ds =650, v gs =0v, t j =150c gate-source leakage current i gss - - 100 na v gs =20v, v ds =0v drain-source on-state resistance r ds(on) - - 0.54 1.40 0.60 - w v gs =10v, i d =2.1a, t j =25c v gs =10v, i d =2.1a, t j =150c gate resistance r g - 10.5 - w f =1mhz,opendrain table5dynamiccharacteristics values min. typ. max. parameter symbol unit note/testcondition input capacitance c iss - 440 - pf v gs =0v, v ds =100v, f =1mhz output capacitance c oss - 30 - pf v gs =0v, v ds =100v, f =1mhz effective output capacitance, energy related 1) c o(er) - 21 - pf v gs =0v, v ds =0...480v effective output capacitance, time related 2) c o(tr) - 88 - pf i d =constant, v gs =0v, v ds =0...480v turn-on delay time t d(on) - 10 - ns v dd =400v, v gs =13v, i d =3.2a, r g =6.8 w ;seetable9 rise time t r - 8 - ns v dd =400v, v gs =13v, i d =3.2a, r g =6.8 w ;seetable9 turn-off delay time t d(off) - 64 - ns v dd =400v, v gs =13v, i d =3.2a, r g =6.8 w ;seetable9 fall time t f - 11 - ns v dd =400v, v gs =13v, i d =3.2a, r g =6.8 w ;seetable9 table6gatechargecharacteristics values min. typ. max. parameter symbol unit note/testcondition gate to source charge q gs - 2.75 - nc v dd =480v, i d =3.2a, v gs =0to10v gate to drain charge q gd - 12 - nc v dd =480v, i d =3.2a, v gs =0to10v gate charge total q g - 23 - nc v dd =480v, i d =3.2a, v gs =0to10v gate plateau voltage v plateau - 5.5 - v v dd =480v, i d =3.2a, v gs =0to10v 1) c o(er) isafixedcapacitancethatgivesthesamestoredenergyas c oss while v ds isrisingfrom0to480v 2) c o(tr) isafixedcapacitancethatgivesthesamechargingtimeas c oss while v ds isrisingfrom0to480v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
7 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet table7reversediodecharacteristics values min. typ. max. parameter symbol unit note/testcondition diode forward voltage v sd - 0.9 - v v gs =0v, i f =3.2a, t j =25c reverse recovery time t rr - 270 - ns v r =400v, i f =3.2a,d i f /d t =100a/s; see table 8 reverse recovery charge q rr - 2 - c v r =400v, i f =3.2a,d i f /d t =100a/s; see table 8 peak reverse recovery current i rrm - 13 - a v r =400v, i f =3.2a,d i f /d t =100a/s; see table 8 tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
8 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet 5electricalcharacteristicsdiagrams diagram1:powerdissipation t c [c] p tot [w] 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 p tot =f( t c ) diagram2:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =25c; d =0;parameter: t p diagram3:safeoperatingarea v ds [v] i d [a] 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 2 1 s 10 s 100 s 1 ms 10 ms dc i d =f( v ds ); t c =80c; d =0;parameter: t p diagram4:max.transientthermalimpedance t p [s] z thjc [k/w] 10 -5 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 10 0 10 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse z thjc =f( t p );parameter: d=t p / t tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
9 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet diagram5:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 4 8 12 16 20 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =25c;parameter: v gs diagram6:typ.outputcharacteristics v ds [v] i d [a] 0 5 10 15 20 0 3 6 9 12 20 v 10 v 8 v 7 v 6 v 5.5 v 5 v 4.5 v i d =f( v ds ); t j =125c;parameter: v gs diagram7:typ.drain-sourceon-stateresistance i d [a] r ds(on) [ w ] 0 2 4 6 8 10 12 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 10 v 5 v 5.5 v 6 v 6.5 v 7 v r ds(on) =f( i d ); t j =125c;parameter: v gs diagram8:drain-sourceon-stateresistance t j [c] r ds(on) [ w ] -50 -25 0 25 50 75 100 125 150 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 98% typ r ds(on) =f( t j ); i d =2.1a; v gs =10v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
10 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet diagram9:typ.transfercharacteristics v gs [v] i d [a] 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 18 20 150 c 25 c i d =f( v gs ); v ds =20v;parameter: t j diagram10:typ.gatecharge q gate [nc] v gs [v] 0 5 10 15 20 25 0 1 2 3 4 5 6 7 8 9 10 120 v 480 v v gs =f( q gate ); i d =3.2apulsed;parameter: v dd diagram11:forwardcharacteristicsofreversediode v sd [v] i f [a] 0.0 0.5 1.0 1.5 2.0 10 -1 10 0 10 1 10 2 25 c 125 c i f =f( v sd );parameter: t j diagram12:avalancheenergy t j [c] e as [mj] 25 50 75 100 125 150 0 25 50 75 100 125 150 e as =f( t j ); i d =1.3a; v dd =50v tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
11 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet diagram13:drain-sourcebreakdownvoltage t j [c] v br(dss) [v] -75 -50 -25 0 25 50 75 100 125 150 175 580 600 620 640 660 680 700 720 740 v br(dss) =f( t j ); i d =1.0ma diagram14:typ.capacitances v ds [v] c [pf] 0 100 200 300 400 500 10 0 10 1 10 2 10 3 10 4 ciss coss crss c =f( v ds ); v gs =0v; f =1mhz diagram15:typ.cossstoredenergy v ds [v] e oss [j] 0 100 200 300 400 500 0.0 0.5 1.0 1.5 2.0 2.5 e oss = f (v ds ) tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3
12 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet 6testcircuits table8diodecharacteristics table9switchingtimes table10unclampedinductiveload tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
13 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet 7packageoutlines figure1outlinepg-to251,dimensionsinmm/inches tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
14 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet 8appendixa table11relatedlinks ? ifxcoolmos tm e6webpage: www.infineon.com ? ifxcoolmos tm e6applicationnote: www.infineon.com ? ifxcoolmos tm e6simulationmodel: www.infineon.com ? ifxdesigntools: www.infineon.com tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d
15 650vcoolmos?e6powertransistor IPS65R600E6 rev.2.0,2015-04-23 final data sheet revisionhistory IPS65R600E6 revision:2015-04-23,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2015-04-23 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. tab d r a i n p i n 2 , t a b g a t e p i n 1 s o u r c e p i n 3 test circuit for diode characteristics diode recovery waveform t v , i i rrm i f v ds 10 % i rrm t rr t f t s q f q s di f / dt di rr / dt v ds ( peak ) q rr = q f + q s t rr = t f + t s v ds i f v ds i f r g 1 r g 2 r g 1 = r g 2 switching times test circuit for inductive load switching times waveform v ds v gs t d ( on ) t d ( off ) t r t on t f t off 10 % 90 % v ds v gs unclamped inductive load test circuit unclamped inductive waveform v ds v ( br ) ds i d v ds v ds i d

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